“华润华晶600V系列CS1N60A1H场效应管现货”参数说明
是否有现货: | 是 | 认证: | RoHS |
品牌: | 华晶 | 类型: | 耗尽型MOS管(N沟道) |
材料: | N-FET硅N沟道 | 封装外形: | P-DIT/塑料双列直插 |
用途: | MOS-INM/独立组件 | 导电方式: | 耗尽型 |
型号: | CS1N60A1H | 规格: | 1A 600V |
商标: | CS | 包装: | 1000PCS |
“华润华晶600V系列CS1N60A1H场效应管现货”详细介绍
深圳飞捷电子代理无锡华润华晶微电子600V系列Silicon N-Channel Power MOSFET:CS1N60A1H,TO-92封装,
主要用于等开关电源,适配器,充电器.
1.产品概述: CS1N60A1H,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
产品封装形式:TO-92,符合RoHS指令要求。
2.产品特点:●Fast Switching
●Low ON Resistance(Rdson≤15Ω)
●Low Gate Charge (Typical Data:5.0nC)
●Low Reverse transfer capacitances(Typical:2.7pF)
●100% Single Pulse avalanche energy Test
3.主要用途:主要用于等开关电源,适配器,充电器